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PSMN9R5-100PS_15

Description
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
File Size259KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PSMN9R5-100PS_15 Overview

N-channel 100 V 9.6 mΩ standard level MOSFET in T0220

PSMN9R5-100PS
17 October 2013
TO
-2
20A
B
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive
3. Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 13
V
GS
= 10 V; I
D
= 60 A; V
DS
= 50 V;
Fig. 14; Fig. 15
-
-
23
82
-
-
nC
nC
Min
-
-
-
Typ
-
-
-
Max
100
89
211
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
8.16
9.6
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
Avalanche ruggedness
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 89 A;
V
sup
≤ 100 V; unclamped; R
GS
= 50 Ω
-
-
177
mJ
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