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PHK5NQ15T_15

Description
N-channel TrenchMOS standard level FET
File Size272KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PHK5NQ15T_15 Overview

N-channel TrenchMOS standard level FET

PHK5NQ15T
2 August 2013
SO
8
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
2. Features and benefits
Low conduction losses due to low on-state resistance
3. Applications
DC-to-DC convertors switching
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 150 °C
T
sp
= 25 °C; V
GS
= 10 V;
Fig. 1; Fig. 3
T
sp
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 9;
Fig. 10
V
GS
= 10 V; I
D
= 5 A; V
DS
= 75 V;
T
j
= 25 °C;
Fig. 11
-
12
-
nC
Min
-
-
-
Typ
-
-
-
Max
150
5
6.25
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
56
75
Dynamic characteristics
Q
GD
gate-drain charge
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