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PMCM650VNE_15

Description
12 V, N-channel Trench MOSFET
File Size366KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PMCM650VNE_15 Overview

12 V, N-channel Trench MOSFET

PMCM650VNE
7 April 2015
WL
CS
P6
12 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Ultra small package: 0.98 × 1.48 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 4.5 V; I
D
= 3 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
12
8
8.4
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
21
25
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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