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2N5462RL1

Description
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size70KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

2N5462RL1 Overview

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN

2N5462RL1 Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Codeunknow
Other featuresEUROPEAN PART NUMBER
ConfigurationSINGLE
FET technologyJUNCTION
Maximum feedback capacitance (Crss)2 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature135 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
ON Semiconductort
2 DRAIN
JFET Amplifiers
P–Channel — Depletion
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
V
DG
V
GSR
I
G(f)
P
D
T
J
T
stg
3
GATE
1 SOURCE
2N5460
2N5461
2N5462
Value
40
40
10
350
2.8
–65 to +135
–65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
1
2
3
CASE 29–11, STYLE 7
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I
G
= 10
µAdc,
V
DS
= 0)
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0)
(V
GS
= 30 Vdc, V
DS
= 0)
(V
GS
= 20 Vdc, V
DS
= 0, T
A
= 100°C)
(V
GS
= 30 Vdc, V
DS
= 0, T
A
= 100°C)
Gate–Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 1.0
µAdc)
Gate–Source Voltage
(V
DS
= 15 Vdc, I
D
= 0.1 mAdc)
(V
DS
= 15 Vdc, I
D
= 0.2 mAdc)
(V
DS
= 15 Vdc, I
D
= 0.4 mAdc)
V
(BR)GSS
2N5460, 2N5461, 2N5462
I
GSS
2N5460, 2N5461, 2N5462
2N5460, 2N5461, 2N5462
2N5460
2N5461
2N5462
2N5460
2N5461
2N5462
V
GS(off)
0.75
1.0
1.8
0.5
0.8
1.5
5.0
1.0
6.0
7.5
9.0
4.0
4.5
6.0
nAdc
µAdc
Vdc
40
Vdc
V
GS
Vdc
©
Semiconductor Components Industries, LLC, 2001
72
May, 2001 – Rev. 2
Publication Order Number:
2N5460/D
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