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BUK664R4-55C_15

Description
N-channel TrenchMOS intermediate level FET
File Size204KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK664R4-55C_15 Overview

N-channel TrenchMOS intermediate level FET

D2
PA
K
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Rev. 03 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
55
100
204
V
A
W
Static characteristics
R
DSon
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 14
-
-
11.1
4.2
13
4.9
mΩ
mΩ
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