2N5307J05Z datasheet, PDF - EEWORLD Datasheet

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2N5307J05Z: DescriptionSmall Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size43KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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2N5307J05Z Overview

Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

2N5307J05Z Parametric

Parameter Name	Attribute value
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1.2 A
Collector-emitter maximum voltage	40 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	6000
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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2N5307J05Z Related Products

	2N5307J05Z	2N5307D74Z	2N5307D26Z	2N5307D27Z	2N5307D75Z	2N5307J18Z
Description	Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN	Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow	compli	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1.2 A	1.2 A	1.2 A	1.2 A	1.2 A	1.2 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	6000	6000	6000	6000	6000	6000
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1
JEDEC-95 code	-	TO-92	TO-92	TO-92	TO-92	-

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