2N7052D26Z datasheet, PDF - EEWORLD Datasheet

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2N7052D26Z: DescriptionSmall Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size133KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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2N7052D26Z Overview

Small Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2N7052D26Z Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	100 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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2N7052D26Z Related Products

	2N7052D26Z	2N7052J05Z	2N7052J18Z	2N7052D27Z	2N7052D75Z
Description	Small Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
Collector-emitter maximum voltage	100 V	100 V	100 V	100 V	100 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	1000	1000	1000	1000	1000
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	1	1	1
JEDEC-95 code	TO-92	-	-	TO-92	TO-92

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