ZCN9150ASTOA datasheet, PDF - EEWORLD Datasheet

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ZCN9150ASTOA: DescriptionInsulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size23KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZCN9150ASTOA Overview

Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZCN9150ASTOA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
Other features	FAST
Maximum collector current (IC)	0.32 A
Collector-emitter maximum voltage	500 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	POWER CONTROL
Transistor component materials	SILICON

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ZCN9150ASTOA Related Products

	ZCN9150ASTOA	ZCN9150ASTOE	ZCN9150ASTOF	ZCN9150ASTOB	ZCN9150ASTZ
Description	Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Other features	FAST	FAST	FAST	FAST	FAST
Maximum collector current (IC)	0.32 A	0.32 A	0.32 A	0.32 A	0.32 A
Collector-emitter maximum voltage	500 V	500 V	500 V	500 V	500 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
JESD-609 code	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	40	40	40
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Zetex Semiconductors	-	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors

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