Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.030 X 0.030 INCH, G21, DIE-2
| Parameter Name | Attribute value |
| Maker | Diodes Incorporated |
| Parts packaging code | DIE |
| package instruction | UNCASED CHIP, S-XUUC-N2 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain-source on-resistance | 25 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-XUUC-N2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | UNSPECIFIED |
| Package shape | SQUARE |
| Package form | UNCASED CHIP |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | 10 |
| Transistor component materials | SILICON |
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