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UM2306

Description
PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size119KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

UM2306 Overview

PIN DIODE

UM2306 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW DISTORTION
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage600 V
Shell connectionANODE
ConfigurationSINGLE
Maximum diode capacitance20 pF
Nominal diode capacitance15 pF
Diode component materialsSILICON
Maximum diode forward resistance0.4 Ω
Diode resistance test current100 mA
Diode resistance test frequency1 MHz
Diode typePIN DIODE
frequency bandMEDIUM FREQUENCY
JESD-30 codeS-XSSO-G1
JESD-609 codee0
Minority carrier nominal lifetime80 µs
Number of components1
Number of terminals1
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Reverse test voltage100 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
580 Pleasant St.
Watertown, MA 02472
PH: (617) 926-0404
FAX: (617) 924-1235
UM2300
SERIES
Features
LF band (100 KHz) PIN
Long Lifetime (80
µs
typ.)
High Power (1 KW CW)
High Isolation (35 dB)
Low Loss (0.2 dB)
Very Low Distortion (IP3 = > 60 dBm)
Voltage Ratings to 1000 V
PIN DIODE
SWITCH
Description
TYPICAL CAPACITANCE vs REVERSE VOLTAGE
UM2300 Series PIN diodes are designed for transmit /
receive switch and attenuator application in LF band
( 100 KHz ) and above. As series configured switches,
these long lifetime (80
µS
typ) diodes can control up to
2.5 KW CW in a 50 ohm system. In MF band, insertion
loss is less than 0.2 dB and isolation is greater than
35 dB (‘ ’
off state).
The UM2300 series offers the lowest distortion perform-
ance in both transmit & receive modes. Less than 10
mA forward bias is required to obtain an IP3 of 60 dBm
at 150 KHz with 1 watt per tone. The forward biased
resistance/reactance vs. frequency characteristics are
flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
In attenuator configurations, the UM2300 produces
extremely low distortion at low values of attenuator
control current, & very low insertion loss ( 0.2 dB) in
the ‘0 dB ’attenuator state.
130
120
110
100
90
200 KHz
100 KHz
Ct (pF)
80
70
60
50
40
30
20
10
0
0
4 MHz
1 MHz
400 KHz
2 MHz
20
40
60
80
100
120
140
160
180
200
Vr (VOLTS)
Voltage Ratings (25°
C)
Reverse Voltage ( V
R
)
@ I
R
= 10
µA
100
200
400
600
800
1000
Max.
0.4
20
10
Units
pF
µA
µs
dBm
DEVICE
Electrical Specifications (25°
C)
Test
Diode Resistance R
S
Capacitance C
T
Reverse Current I
R
Carrier Lifetime
τ
IP3
Min.
Typ.
0.3
15
80
60
VOLTS............ UM2301
VOLTS............ UM2302
VOLTS............ UM2304
VOLTS............ UM2306
VOLTS............ UM2308
VOLTS............ UM2310
Conditions
F
1
= 1 MHz, 100 mA
F
2
= 1 MHz, 100 V
@ Rated Voltage
I
f
= 10 mA / 100 V
2 WATT total, I
f
= 25 mA
F
1
= 0.999 MHz, F
2
= 1.001 MHz
1.0 WATT/ tone
25° Stud Temperature
C
60
50
Thermal Resistance
1.0
°
/W
C
MSCOXXXA 12-14-98
DSW UM2300 <->(34989)

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