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A3PN250-1QN100I

Description
Field Programmable Gate Array, PBCC100, 8 X 8 MM, 0.85 HEIGHT, 0.50 MM PITCH, QFN-100
CategoryProgrammable logic devices    Programmable logic   
File Size3MB,92 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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A3PN250-1QN100I Overview

Field Programmable Gate Array, PBCC100, 8 X 8 MM, 0.85 HEIGHT, 0.50 MM PITCH, QFN-100

A3PN250-1QN100I Parametric

Parameter NameAttribute value
MakerMicrosemi
package instruction,
Reach Compliance Codeunknown
JESD-30 codeS-PBCC-B100
Number of terminals100
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formCHIP CARRIER
Programmable logic typeFIELD PROGRAMMABLE GATE ARRAY
Certification statusNot Qualified
surface mountYES
Terminal formBUTT
Terminal locationBOTTOM
Advance v0.3
ProASIC 3 nano Flash FPGAs
Features and Benefits
Wide Range of Features
• 10 k to 250 k System Gates
• Up to 36 kbits of True Dual-Port SRAM
• Up to 71 User I/Os
®
®
Advanced I/Os
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• I/O Registers on Input, Output, and Enable Paths
• Selectable Schmitt Trigger Inputs
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate
and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
• Up to Six CCC Blocks, One with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay
Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
Reprogrammable Flash Technology
130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process
Live at Power-Up (LAPU) Level 0 Support
Single-Chip Solution
Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
In-System Programming (ISP) and Security
• Secure ISP Using On-Chip 128-Bit Advanced Encryption
Standard (AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
to Secure FPGA Contents
Clock Conditioning Circuit (CCC) and PLL
Low Power
Low-Power ProASIC3 nano Products
1.5 V Core Voltage for Low Power
Support for 1.5 V-Only Systems
Low-Impedance Flash Switches
Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18 organization)
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
Enhanced Commercial Temperature Range
• –20°C to +70°C
ProASIC3 nano Devices
ProASIC3 nano Devices
System Gates
Typical Equivalent Macrocells
VersaTiles (D-flip-flops)
RAM kbits (1,024 bits)
4,608-Bit
Blocks
2
2
2
A3PN010
10 k
86
260
1k
4
2
34
34
QN48
A3PN015
15 k
128
384
1k
4
3
49
QN68
A3PN020
20 k
172
520
1k
4
3
52
52
QN68
A3PN030
1
30 k
256
768
1k
6
2
81
83
QN48, QN68
VQ100
A3PN060
60 k
512
1,536
18
4
1k
Yes
1
18
2
71
71
QN100
VQ100
A3PN125
125 k
1,024
3,072
36
8
1k
Yes
1
18
2
71
71
QN100
VQ100
A3PN250
250 k
2,048
6,144
36
8
1k
Yes
1
18
4
68
68
QN100
VQ100
FlashROM Bits
Secure (AES) ISP
Integrated PLL in CCCs
2
VersaNet Globals
3
I/O Banks
Maximum User I/Os
Maximum User I/Os (Known Good Die)
Package Pins
QFN
VQFP
Notes:
1. A3PN030 is available in the Z feature grade only and offers package compatibility with the lower density nano devices. Refer to
"ProASIC3 nano Ordering Information" on page III.
2. A3PN030 and smaller devices do not support this feature.
3. Six chip (main) and three quadrant global networks are available for A3PN060 and above.
4. For higher densities and support of additional features, refer to the
ProASIC3
and
ProASIC3E
handbooks.
† A3PN030 and smaller devices do not support this feature.
November 2008
© 2008 Actel Corporation
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