30KP100S datasheet, PDF - EEWORLD Datasheet

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30KP100S: DescriptionGlass passivated junction chip; File Size121KB，3 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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30KP100S Overview

Glass passivated junction chip

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30KP33S,SC SERIES

30K Watts TVS Diodes

: 33 - 400 Volts

: 30,000 Watts

Features

Glass passivated junction chip

Excellent Clamping Capability

Fast Response Time

Low Leakage Current

Pb / RoHS Free

DO-204AR

0.251 (6.40)

0.244 (6.20)

1.00 (25.4)

MIN.

Mechanical Data

Case : molded plastic

Epoxy : UL94V-O rate flame retardant

Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Polarity : Color band denotes cathode end

Mounting position : Any

Weight : 1.40 grams (approximate)

0.051 (1.30)

0.047 (1.20)

0.368 (9.35)

0.364 (9.25)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS

(Ta = 25

°C)

Rating

Peak Pulse Power Dissipation (10 x 1000μs, see Fig.1 )

Steady State Power Dissipation

Peak Forward Surge Current, 8.3ms Single Half Sine Wave

FSM

(Uni-directional devices only)

Operating and Storage Temperature Range

, T

STG

- 65 to + 150

°C

250

Symbol

Value

30,000

Unit

Fig. 1 - Pulse Wave Form

PEAK PULSE CURRENT - % I

100

Peak Value - I

Test Waveform

Paramiters

tr = 10

μs

tp = 1000

μs

Half Value - I

10x1000

μs

Waveform

T, TIME(ms)

http://www.luguang.cn

mail:lge@luguang.cn

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