BT137-600E
Sensitive Gate Triacs
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose
bidirectional switching and phase control applications, where high sensitivity is required in all
four quadrants.
Symbol
Simplified outline
Applications:
T2
G
Pin
1
2
3
TAB
T1
Motor control
Industrial and domestic lighting
12
3
TO-220
Heating
Static switching
Description
Main terminal 1 (T1)
Main terminal 2 (T2)
gate (G)
Main terminal 2 (T2)
Features
Blocking voltage to 600 V
On-state RMS current to 8 A
SYMBOL
V
DRM
PARAMETER
Repetitive peak off-state voltages
Value
600
8
65
Unit
V
A
A
I
T
RMS
RMS on-state current
Non-repetitive peak on-state current
I
TSM
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance
Junction to mounting base
CONDITIONS
Full cycle
Half cycle
MIN
-
-
-
TYP
-
-
60
MAX
2.0
2.4
UNIT
K/W
K/W
R
th j-a
Thermal resistance
Junction to ambient
In free air
-
K/W
http://www.luguang.cn
mail:lge@luguang.cn
BT137-600E
Sensitive Gate Triacs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
V
DRM
I
T(RMS)
I
TSM
It
2
PARAMETER
Repetitive peak off-state
Voltages
RMS on-state current
Non-repetitive surge
peak on-statecurrent
I t for fusing
2
CONDITIONS
MIN
-
Value
600
8
65
71
21
UNIT
V
A
A
A
A
2
S
dI
T
/dt
Repetitive rate of rise of
on-state current after
triggering
Full sine wave;T
mb
102
full sine wave;,
T
j
=25
prior to surge
T=10ms
I
TM
=12A; I
G
=0.2A;
DI
G
/dt=0.2A/ s
t=20ms
t=16.7ms
-
-
-
-
-
-
-
-
-
-
T2+G+
T2+G-
T2-G-
T2-G+
50
50
50
10
A/ s
A/ s
A/ s
A/ s
A
I
GM
Peak gate current
2
5
5
0.5
150
125
V
GM
P
GM
P
G(AV)
T
stg
T
j
O
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
V
W
W
Over any 20 ms period
-
-
-40
-
Operating junction
Temperature
T
J
=25 C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
I
GT1
Gate trigger current
V
D
=12V; I
T
=0.1A
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
MIN
-
-
-
-
-
-
-
-
-
-
-
0.25
-
TYP MAX UNIT
2.5
4.0
5.0
11
3.0
14
3.0
4.0
2.5
1.3
0.7
0.4
0.1
10
10
10
25
25
35
25
35
20
1.65
1.5
-
0.5
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
I
L
Latching current
V
D
=12V; I
GT
=0.1A
I
H
V
T
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
GT
I
D
V
D
=12V; I
GT
=0.1A
I
T
=10A
V
D
=12V;I
T
=0.1A
V
D
=400V;I
T
=0.1A;T
J
=125
V
D
=V
DRM(max)
;T
J
=125
V
V
mA
Dynamic Characteristics
dV
D
/dt
t
gt
Critical rate of rise of
Off-state voltage
Gate controlled turn-on
time
V
DM
=67% V
DRM(max)
;Tj=125 ;
Exponential wave form;gate open circuit
I
TM
=12A;V
D
=V
DRM(max)
;I
G
=0.1A;
Dl
G
/dt=5A/ s
-
-
50
2
-
V/ s
s
-
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mail:lge@luguang.cn
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