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2SC3772-2

Description
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size40KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC3772-2 Overview

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN

2SC3772-2 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.07 A
Collector-based maximum capacity1 pF
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3000 MHz
Base Number Matches1
Ordering number:ENN1945B
NPN Epitaxial Planar Silicon Transistor
2SC3772
UHF Oscillator, Mixer, Low-Noise Amplifier,
Wide-Band Amplifier Applications
Applications
· UHF frequency converters, local oscillators, low-
noise amplifiers, wide-band amplifiers.
Package Dimensions
unit:mm
2018B
[2SC3772]
Features
· Small noise figure : NF=2.5dB typ (f=0.9GHz).
· High power gain : MAG=12dB typ (f=0.9GHz).
· High cutoff frequency : f
T
=3.0GHz typ.
0.5
0.4
3
0.16
0 to 0.1
1
0.95 0.95
2
1.9
2.9
0.8
1.1
0.5
1.5
2.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
25
16
3
70
20
250
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
VCB=16V, IE=0
VEB=2V, IC=0
VCE=10V,
VCE=10V,
IC=10mA
40*
1.5
3.0
0.65
0.45
1.0
IC=10mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Conditions
Ratings
min
typ
max
1.0
10
200*
GHz
pF
pF
Unit
µA
µA
* : The 2SC3772 is classified by 10mA h
FE
as follows :
(Note) Marking : LY
h
FE
rank : 2, 3, 4
Continued on next page.
Rank
hFE
2
40 to 80
3
60 to 120
4
100 to 200
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62404TN (PC)/N3098HA (KT)/5318MO/5137KI/O115KI, TS No.1945–1/5

2SC3772-2 Related Products

2SC3772-2 2SC3772-3 2SC3772-4
Description RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CP, 3 PIN
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.07 A 0.07 A 0.07 A
Collector-based maximum capacity 1 pF 1 pF 1 pF
Collector-emitter maximum voltage 16 V 16 V 16 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 60 100
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 3000 MHz 3000 MHz 3000 MHz
Base Number Matches 1 1 1

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