2N6427RL1 datasheet, PDF - EEWORLD Datasheet

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2N6427RL1: DescriptionTRANSISTOR 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size189KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2N6427RL1 Overview

TRANSISTOR 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal

2N6427RL1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Manufacturer packaging code	CASE 29-04
Reach Compliance Code	compli
ECCN code	EAR99
Other features	EUROPEAN PART NUMBER
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	40 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	14000
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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ON Semiconductort

Darlington Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

Symbol

CEO

CBO

EBO

, T

stg

Value

500

625

5.0

1.5

–55 to +150

Unit

Vdc

mAdc

2N6426*

2N6427

*ON Semiconductor Preferred Device

mW/°C

Watts

mW/°C

°C

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Symbol

qJA

qJC

Max

200

83.3

Unit

°C/W

COLLECTOR 3

BASE

EMITTER 1

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

= 10 mAdc, V

= 0)

Collector–Base Breakdown Voltage

= 100

mAdc,

= 0)

Emitter–Base Breakdown Voltage

= 10

mAdc,

= 0)

Collector Cutoff Current

= 25 Vdc, I

= 0)

Collector Cutoff Current

= 30 Vdc, I

= 0)

Emitter Cutoff Current

= 10 Vdc, I

= 0)

1. Pulse Test: Pulse Width

300

ms;

Duty Cycle

2.0%.

(BR)CEO

(BR)CBO

(BR)EBO

CES

CBO

EBO

—

1.0

Vdc

mAdc

nAdc

Semiconductor Components Industries, LLC, 2001

February, 2001 – Rev.1

Publication Order Number:

2N6426/D

2N6427RL1 Related Products

	2N6427RL1	2N6427RL	2N6427RLRM	2N6427RLRP	2N6427RLRE	2N6427ZL1
Description	TRANSISTOR 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal	500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN	TRANSISTOR 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN, BIP General Purpose Small Signal	500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN	500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN	500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CASE 29-04, TO-226AA, 3 PIN
Contacts	3	3	3	3	3	3
Manufacturer packaging code	CASE 29-04	CASE 29-04	CASE 29-04	CASE 29-04	CASE 29-04	CASE 29-04
Reach Compliance Code	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	14000	14000	14000	14000	14000	14000
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	-

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