EEWORLDEEWORLDEEWORLD

Part Number

Search

2SD1699TQ-T1

Description
800mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size199KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SD1699TQ-T1 Overview

800mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3

2SD1699TQ-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)8000
JESD-30 codeR-PSSO-F3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SD1699TQ-T1 Related Products

2SD1699TQ-T1 2SD1699TR 2SD1699TR-T1 2SD1699TQ
Description 800mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3 800mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN 800mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3 800mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 80 V 80 V 80 V 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 8000 4000 4000 8000
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 225 225 225
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 2 W 2 W 2 W 2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
Summary of Modelsim calling Altera simulation library method
Method 1: By adding the altrea_mf.v file to the simulation file ( for Verilog language, basically all design languages are Verilog now ), you can directly simulate the project of customizing IP core i...
eeleader Energy Infrastructure?
Who has written a DSP graduation thesis on radar moving target signal processing?
For help with related knowledge, email: [email]biaofeng1286@163.com[/email]...
biaofeng1286 DSP and ARM Processors
RF power MOSFET product and process development
Central topic: RF Power LD MOSFET Performance CharacteristicsBasic structure and manufacturing process characteristics of RF power LDMOSFETProduct design difficulty analysis and solutionsKey parameter...
cscl Embedded System
How unique do you think TI DSP is?
[size=5][color=#ff0000][b]Event details>>[/b][url=https://www.eeworld.com.cn/huodong/201506TI_DSP-Talk/]How unique is TI DSP in your eyes? [/url][/color][/size] [color=#ff0000][b] Event time[/b][/colo...
EEWORLD社区 DSP and ARM Processors
The conduction state of the NMOS driver in the half-bridge drive circuit
I use IR2103 as a half-bridge drive circuit, and connect two NMOS drive tubes externally, let's say they are T1 and T2. What is the specific working state of T1 and T2? Are they turned on at the same ...
费米 Analog electronics
ARM MMU Understanding (Based on ARM 920T)
ARM MMU Understanding (Based on ARM 920T) Introduction to MMU In embedded systems, storage systems vary greatly and may include multiple types of storage devices, such as FLASH, SRAM, SDRAM, ROM, etc....
18538579903 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1386  473  603  2016  981  28  10  13  41  20 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号