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2SC4615D(TP-FA)

Description
TRANSISTOR,BJT,NPN,400V V(BR)CEO,1A I(C),TO-252VAR
CategoryDiscrete semiconductor    The transistor   
File Size47KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SC4615D(TP-FA) Overview

TRANSISTOR,BJT,NPN,400V V(BR)CEO,1A I(C),TO-252VAR

2SC4615D(TP-FA) Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
surface mountYES
Base Number Matches1
Ordering number:ENN3398A
2SA1772 : PNP Epitaxial Planar Silicon Transistor
2SC4615 : NPN Triple Diffused Planar Silicon Transistor
2SA1772/2SC4615
High-Voltage Driver Applications
Features
· Large current capacity (I
C
=1A).
· High breakdown votlage (V
CEO
≥400V).
Package Dimensions
unit:mm
2045B
[2SA1772/2SC4615]
6.5
5.0
4
1.5
2.3
0.5
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1772/2SC4615]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.8
0.5
2
3
2.5
1.2
0 to 0.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN(KT)/83198HA (KT)/12894TH AX-8287/5300TA (KOTO) X-6468, 6469 No.3398–1/5
1.2

2SC4615D(TP-FA) Related Products

2SC4615D(TP-FA) 2SA1772C(TP) 2SA1772E(TP-FA) 2SA1772D(TP) 2SA1772D(TP-FA) 2SA1772C(TP-FA) 2SA1772E(TP) 2SC4615E(TP)
Description TRANSISTOR,BJT,NPN,400V V(BR)CEO,1A I(C),TO-252VAR TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-251VAR TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-252VAR TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-251VAR TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-252VAR TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-252VAR TRANSISTOR,BJT,PNP,400V V(BR)CEO,1A I(C),TO-251VAR TRANSISTOR,BJT,NPN,400V V(BR)CEO,1A I(C),TO-251VAR
Reach Compliance Code compli compli compli compli compli compli compli compli
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Configuration Single Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 60 40 100 60 60 40 100 100
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN PNP PNP PNP PNP PNP PNP NPN
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W 15 W 15 W 15 W 15 W
surface mount YES NO YES NO YES YES NO NO
Base Number Matches 1 1 1 1 1 1 1 1
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