Ordering number:ENN3398A
2SA1772 : PNP Epitaxial Planar Silicon Transistor
2SC4615 : NPN Triple Diffused Planar Silicon Transistor
2SA1772/2SC4615
High-Voltage Driver Applications
Features
· Large current capacity (I
C
=1A).
· High breakdown votlage (V
CEO
≥400V).
Package Dimensions
unit:mm
2045B
[2SA1772/2SC4615]
6.5
5.0
4
1.5
2.3
0.5
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1772/2SC4615]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.8
0.5
2
3
2.5
1.2
0 to 0.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN(KT)/83198HA (KT)/12894TH AX-8287/5300TA (KOTO) X-6468, 6469 No.3398–1/5
1.2
2SA1772/2SC4615
( ) : 2SA1772
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(–)400
(–)400
(–)5
(–)1
(–)2
1
15
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)100mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)30V, f=1MHz
IC=(–)200mA, IB=(–)20mA
IC=(–)200mA, IB=(–)20mA
(–)400
(–)400
(–)5
(0.25)
0.11
(3.0)
4.0
(0.3)
0.65
40*
(50)70
(12)8
(–)1.0
(–)1.0
Conditions
Ratings
min
typ
max
(–)1.0
(–)1.0
200*
MHz
pF
V
V
V
V
V
µs
µs
µs
µs
µs
µs
Unit
µA
µA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
* : The 2SA1772/2SC4615 are classified by 100mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
470µF
VCE=150V
OUTPUT
RL
+
100µF
VBE=--5V
10IB1= --10IB2= IC=200mA
RL=750Ω, RB=50Ω, at IC=200mA
(For PNP, the polarity is reversed.)
No.3398–2/5
2SA1772/2SC4615
--1.0
IC -- VBE
2SA1772
VCE=--10V
1.0
IC -- VBE
2SC4615
VCE=10V
--0.8
0.8
Collector Current, IC – A
--0.4
Ta=7
5
°
C
0.4
Ta=7
5
°
C
25
°
C
0
0.2
0.4
0.6
--0.6
Collector Current, IC – A
25
°
C
0.6
--0.2
--25
°
C
0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
3
2
ITR04587
3
hFE -- IC
Base-to-Emitter Voltage, VBE – V
--25
°
C
ITR04588
hFE -- IC
100
DC Current Gain, hFE
7
5
3
2
DC Current Gain, hFE
Ta=75°C
25°C
--25°C
2SA1772
VCE=--10V
2
Ta=75°C
100
7
5
3
2
2SC4615
VCE=10V
25°C
--25°C
10
7
5
3
3
5
7 --10
2
3
5 7 --100
2
3
10
7
5
3
Collector Current, IC –
3
5 7--1000 2 3
ITR04589
mA
3
3
5
7 10
2
3
5 7 100
2
3
Collector Current, IC –
5 7 1000
2 3
mA
ITR04590
f T -- IC
Gain-Bandwidth Product, fT – MHz
2SA1772
VCE=--10V
f T -- IC
2SC4615
VCE=10V
Gain-Bandwidth Product, fT – MHz
2
2
100
7
5
3
2
100
7
5
3
2
10
7
5
3
5
7
--10
2
3
5
7 --100
2
3
5
10
7
5
3
5
7
10
2
3
5
7
100
2
3
5
Collector Current, IC – mA
3
2
ITR04591
100
7
Collector Current, IC – mA
ITR04592
Cob -- VCB
2SA1772
f=1MHz
Cob -- VCB
2SC4615
f=1MHz
Output Capacitance, Cob – pF
Output Capacitance, Cob – pF
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
V
ITR04593
5
100
7
5
3
2
3
2
10
7
5
10
7
5
3
3
7 1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage,VCB–
Collector-to-Base Voltage,VCB– V
7 100
2
ITR04594
No.3398–3/5
g
10
7
CB
2SA1772/2SC4615
10
7
5
g
CB
2SC4615
VCC=150V
10IB1=--10IB2=IC
SW Time -- IC
Switching Time, SW Time --
µs
tst
g
SW Time -- IC
ts
tg
Switching Time, SW Time --
µs
5
3
2
2SA1772
VCC=--150V
10IB1=--10IB2=IC
3
2
1.0
7
5
3
2
0.1
7
5
3
1.0
7
5
3
2
tf
tf
to
n
to
n
0.1
7
5 7 --10
2
3
5
7 --100
2
3
5
7 --1000
2
3
5 7 10
2
3
5
7 100
2
3
5
Collector Current, IC – mA
3
2
ITR04595
3
2
Collector Current, IC – mA
7 1000
2 3
ITR04596
VCE(sat) -- IC
2SA1772
IC / IB=10
VCE(sat) -- IC
2SC4615
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--1.0
7
1.0
7
5
3
2
5
3
2
2 5
°
C
Ta
=--
25
°
C
75
°
C
25
0.1
7
5
°
C
--0.1
7
5
3
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
Ta=75
°
C
--25
°
C
3
5
7
10
2
3
5
7 100
2
3
7 1000
ITR04598
5
Collector Current, IC – mA
3
2
ITR04597
Collector Current, IC – mA
3
2
VBE(sat) -- IC
2SA1772
IC / IB=10
25°C
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
VBE(sat) -- IC
2SC4615
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
--1.0
7
5
3
2
Ta=--25°C
1.0
7
5
3
2
Ta=--25°C
75
°C
75
°C
25°C
--0.1
7
5
3
5 7 --10
2
3
5 7--100
2
3
5 7--1000 2 3
mA
ITR04599
0.1
7
5
3
5
7 10
2
3
5
7 100
2
3
5 7 1000
ITR04600
Collector Current, IC –
Collector Current, IC – mA
10000
7
5
3
2
ASO
7
5
3
2
ASO
2SC4615
ICP=2000mA
IC=1000mA
DC
2SA1772
ICP=–2000mA
IC=–1000mA
DC
Collector Current, IC – mA
Collector Current, IC – mA
1m
10
s
1m
10
--1000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
7
5
ms
DC
ms
DC
s
--100
7
5
3
2
--10
7
5
op
er
ati
on
op
er
)
°
C
25
c=
n(T
tio
era
op
op
era
tio
(T
a=
ati
25
°
C
on
(T
a=
n(T
c=
)
°
C
25
)
25
°
C
)
Tc=25°C
5 7 --10 2 3
5 7--100 2 3 5 7
--1000
ITR04601
Tc=25°C
2 3
5 7 10
2 3
5 7 100 2 3 5 7
1000
ITR04602
3
2
Single pulse
--0.1 2 3 5 7--1.0 2 3
3
2
Single pulse
0.1 2 3 5 7 1.0
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
P
P
No.3398–4/5
2SA1772/2SC4615
1.2
PC -- Ta
2SA1772 / 2SC4615
18
16
15
14
12
10
8
6
4
2
PC -- Ta
2SA1772 / 2SC4615
1.0
Collector Dissipation, P
C
– W
0.8
No
0.6
he
at
sin
k
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Collector Dissipation, P
C
– W
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR04603
Ambient Temperature, Ta – ˚C
ITR04604
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.3398–5/5
京公网安备 11010802033920号
EEWORLD
