ZVN3320A datasheet, PDF - EEWORLD Datasheet

ZVN3320A: Description100mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size63KB，1 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZVN3320A Overview

100mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	0.1 A
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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