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GM71C1000L-10

Description
Fast Page DRAM, 1MX1, 100ns, CMOS, PDIP18,
Categorystorage    storage   
File Size880KB,17 Pages
ManufacturerLG Semicon Co., Ltd.
Download Datasheet Parametric View All

GM71C1000L-10 Overview

Fast Page DRAM, 1MX1, 100ns, CMOS, PDIP18,

GM71C1000L-10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLG Semicon Co., Ltd.
Reach Compliance Codeunknown
Maximum access time100 ns
I/O typeSEPARATE
JESD-30 codeR-PDIP-T18
JESD-609 codee0
memory density1048576 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of terminals18
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum standby current0.0002 A
Maximum slew rate0.06 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
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