DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5843
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• Ideal for low noise, high-gain amplification
NF = 0.9 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
• SiGe technology (f
T
= 60 GHz, f
max
= 60 GHz)
• 6-pin lead-less minimold (M16, 1208 package)
ORDERING INFORMATION
Part Number
2SC5843
2SC5843-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
8.0
2.3
1.2
35
80
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10353EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2003
2SC5843
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Stable Power Gain
S
21e
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 0.5 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
−
−
200
−
−
−
200
200
400
nA
nA
−
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
16.0
−
−
18.0
18.0
0.9
0.17
20.0
−
1.1
0.22
−
dB
dB
pF
dB
MSG
Note 3
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
zD
200 to 400
2
Data Sheet PU10353EJ02V0DS
2SC5843
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
200
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
0.3
f = 1 MHz
250
0.2
150
100
80
50
0.1
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
100
10
1
0.1
0.01
0.001
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35
190
µ
A
160
µ
A
130
µ
A
100
µ
A
70
µ
A
40
µ
A
I
B
= 10
µ
A
0
1
2
3
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
30
25
20
15
10
5
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10353EJ02V0DS
3
Microchip MCU
京公网安备 11010802033920号
EEWORLD
