Ordering number : EN836H
2SK222
SANYO Semiconductors
DATA SHEET
2SK222
Features
•
•
•
N-Channel Junction Silicon FET
Low-Frequency,
Low Noise Amplifier Applications
Ultralow noise figure.
Large
yfs
.
Low gate leakage current.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
PD
Tj
Tstg
Conditions
Ratings
40
--40
10
300
125
--40 to +125
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDS
IGSS
IDSS
VGS(off)
yfs
Ciss
Crss
IG=-
-100µA
VGS=--20V
VDS=10V, VGS=0V
VDS=10V, ID=10µA
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
Conditions
Ratings
min
-40
--1.0
0.6*
0.5
17
14
3.5
12.0*
typ
max
Unit
V
nA
mA
V
mS
pF
pF
Continued on next page.
*
: The 2SK222 is classified by IDSS as follows : (unit : mA).
Rank
hFE
C
0.6 to 1.5
D
1.2 to 3.0
E
2.5 to 6.0
F
5.0 to 12.0
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22807GB TI IM / 42099TH (KT) / 90895MO (KOTO) / 6027KI / 2075MW 8-3836 No.836-1/4
2SK222
Continued from preceding page.
Parameter
Noise Figure
Equivqlent Input Noise Voltage
Symbol
NF1
NF2
VNI
Conditions
VDS=10V, VGS=0V, Rg=1kΩ, f=100Hz
VDS=10V, VGS=0V, Rg=1kΩ, f=1kHz
VDS=10V, VGS=0V, Rg=1kΩ, f=1kHz
Ratings
min
typ
1.0
0.6
2
max
3.0
1.5
Unit
dB
dB
nV/√
Hz
Package Dimensions
unit : mm (typ)
7522-005
5.0
4.0
4.0
0.45
0.5
0.6
2.0
0.45
14.0
5.0
0.44
1 2 3
1 : Source
2 : Gate
3 : Drain
1.3
1.3
SANYO : NP
3.5
ID -- VDS
3.5
ID -- VDS
VGS=0V
3.0
3.0
Drain Current, ID -- mA
2.5
Drain Current, ID -- mA
VGS=0V
2.5
--50mV
2.0
--50mV
--100mV
2.0
--100mV
1.5
1.5
1.0
--150mV
--200mV
--250mV
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
--150mV
0.5
0.5
--200mV
--250mV
0
5
10
15
20
25
30
35
40
45
50
0
0
0
Drain-to-Source Voltage, VDS -- V
ITR00588
Drain-to-Source Voltage, VDS -- V
ITR00589
No.836-2/4
2SK222
ID -- VGS
VDS=10V
12
2
VGS(off) -- IDSS
VDS=10V
ID=10
µ
A
Cutoff Voltage, VGS(off) -- V
10
8
Drain Current, ID -- mA
1.0
7
5
ID
SS =
9.0
mA
6
5.0
m
3.
0m
A
A
4
3
2
2
1.0m
--1.0
--0.8
--0.6
--0.4
--0.2
A
0
0
0.1
5
7
1.0
2
3
5
7
10
2
ITR00591
Gate-to-Source Voltage, VGS -- V
100
ITR00590
100
y
fs -- ID
Drain Current, IDSS -- mA
y
fs -- IDSS
Forward Transfer Admittance,
y
fs -- mS
7
5
3
2
Forward Transfer Admittance,
y
fs -- mS
VDS=10V
f=1kHz
A
9.0m
mA
5.0
7
5
VDS=10V
VGS=0V
f=1kHz
3.0
10
7
5
3
2
mA
3
=1
SS
ID
A
.0m
2
10
7
5
1.0
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
1.0
2
3
5
7
10
2
ITR00593
Drain Current, ID -- mA
12
11
10
ITR00592
12
11
10
NF -- f
Drain Current, IDSS -- mA
NF -- f
VDS=10V
Rg=1kΩ
Noise Figure, NF -- dB
VDS=10V
ID=3mA
Noise Figure, NF -- dB
9
8
7
6
5
4
3
2
1
0
10
2
5 100 2
5
9
8
7
6
5
Rg
=5
Ω
00
4
3
2
1
1k
ID=0.1mA
0.3mA
3.0mA
1k 2
5 10k 2
10k
Ω
2
5 100 2
5
1k
2
5 10k 2
Ω
Frequency, f -- Hz
360
5 100k 2
5 1M
ITR00594
0
10
Frequency, f -- Hz
5 100k 2
5 1M
ITR00595
PD -- Ta
Allowable Power Dissipation, PD -- mW
320
280
240
200
160
120
80
40
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°C
ITR00596
No.836-3/4
2SK222
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
PS No.836-4/4
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