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2SK222E

Description
Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92, NP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SK222E Overview

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92, NP, 3 PIN

2SK222E Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, R-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
FET technologyJUNCTION
JEDEC-95 codeTO-92
JESD-30 codeR-PBCY-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Ordering number : EN836H
2SK222
SANYO Semiconductors
DATA SHEET
2SK222
Features
N-Channel Junction Silicon FET
Low-Frequency,
Low Noise Amplifier Applications
Ultralow noise figure.
Large
yfs
.
Low gate leakage current.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
PD
Tj
Tstg
Conditions
Ratings
40
--40
10
300
125
--40 to +125
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDS
IGSS
IDSS
VGS(off)
yfs
Ciss
Crss
IG=-
-100µA
VGS=--20V
VDS=10V, VGS=0V
VDS=10V, ID=10µA
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
Conditions
Ratings
min
-40
--1.0
0.6*
0.5
17
14
3.5
12.0*
typ
max
Unit
V
nA
mA
V
mS
pF
pF
Continued on next page.
*
: The 2SK222 is classified by IDSS as follows : (unit : mA).
Rank
hFE
C
0.6 to 1.5
D
1.2 to 3.0
E
2.5 to 6.0
F
5.0 to 12.0
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22807GB TI IM / 42099TH (KT) / 90895MO (KOTO) / 6027KI / 2075MW 8-3836 No.836-1/4

2SK222E Related Products

2SK222E 2SK222D 2SK222C 2SK222F
Description Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92, NP, 3 PIN Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92, NP, 3 PIN Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92, NP, 3 PIN Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92, NP, 3 PIN
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3 CYLINDRICAL, R-PBCY-T3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 40 V 40 V 40 V
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code R-PBCY-T3 R-PBCY-T3 R-PBCY-T3 R-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 -
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