2N4356 datasheet, PDF - EEWORLD Datasheet

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2N4356: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon, TO-105, TO-105, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size135KB，2 Pages; ManufacturerAdvanced Semiconductor, Inc.

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2N4356 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon, TO-105, TO-105, 3 PIN

2N4356 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-105
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.5 A
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-105
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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IPN= 0258354 0000046 792

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Parts packaging code	TO-105	TO-72	BCY	BCY	BCY	TO-72	TO-72	BCY	TO-66
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-PBCY-W4	CYLINDRICAL, O-PBCY-W4	CYLINDRICAL, O-PBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	TO-106, 4 PIN	FLANGE MOUNT, O-MBFM-P2
Contacts	3	4	3	3	3	4	4	3	2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknown	unknow
Maximum collector current (IC)	0.5 A	0.05 A	0.1 A	0.1 A	0.1 A	0.03 A	0.03 A	0.1 A	1 A
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
JEDEC-95 code	TO-105	TO-72	TO-106	TO-106	TO-106	TO-72	TO-72	TO-106	TO-66
JESD-30 code	O-PBCY-W3	O-MBCY-W4	O-PBCY-W4	O-PBCY-W4	O-PBCY-W4	O-MBCY-W4	O-MBCY-W4	O-PBCY-W4	O-MBFM-P2
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	4	4	4	4	4	4	4	2
Maximum operating temperature	125 °C	175 °C	125 °C	125 °C	150 °C	200 °C	200 °C	150 °C	175 °C
Package body material	PLASTIC/EPOXY	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	METAL	METAL	PLASTIC/EPOXY	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	FLANGE MOUNT
Polarity/channel type	PNP	NPN	NPN	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.35 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	600 MHz	400 MHz	40 MHz	40 MHz	2000 MHz	1600 MHz	50 MHz	0.03 MHz
Minimum DC current gain (hFE)	25	-	18	50	100	30	30	250	20
Base Number Matches	1	1	1	1	1	1	1	-	-

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