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KV1610STL

Description
Variable Capacitance Diode, 478pF C(T), 12V, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size143KB,2 Pages
ManufacturerTOKO, INC.
Websitehttps://www.murata.com/
Download Datasheet Parametric View All

KV1610STL Overview

Variable Capacitance Diode, 478pF C(T), 12V, Silicon, SOT-23, 3 PIN

KV1610STL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTOKO, INC.
package instructionSOT-23, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage12 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance1%
Minimum diode capacitance ratio18.5
Nominal diode capacitance478 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
minimum quality factor200
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Variable capacitance diode for AM tuning
AMチューナ用電圧可変容量ダイオード
KV1270NT, KV1610S, KV1613L
FEATURES
Included Twin Element: KV1270NT, KV1610S
Included Cathode-common Triple Element: KV1613L
Excellet Matching Between Elements
Excellent Linearity of The CV Curve
High Q: Q=200 to
Extra Large Capacitance Ratio: Q=17.0 /18.5 to
ツインタイプ素子1組搭載:KV1270NT,
KV1610S
カ½ードコモン3素子搭載:
KV1613L
優れた素子間マッチング
CV特性の優れた直線性
高いQ値:
Q=200~
極めて大きな容量変化比:
A=17.0 / 18.5~
CLASSIFICATION
Rank
C
C
1
MIN
MAX
1
446.0
481.0
2
475.0
510.0
PACKAGE OUTLINE
Part name
KV1270NT
TO92-3
KV1610S
KV1613L
SOT23-3
SOT23L-6
610
613
Package
Marking Pin configulation
270
ORDERING INFORMATION
KV1270NT
KV1610STL…Storage direction: TL(Left type)
KV1613LTL…Storage direction: TL(Left type)
* Part name + Storage direction
ABSOLUTE MAXIMUM RATINGS
Parameter
Reverse Voltage
Forward Current
Power Dissipation
Storage Temperature Range
Operating Temperature Range
項目
Symbol
記号
逆方向電圧
順方向電流
許容消費電力
保存温度範囲
動½温度範囲
V
R
I
F
P
D
T
STG
T
OP
Rating
定格
16
26
50
100
-55 to 150
-55 to +85
Unit
単½
Remarks
備考
KV1270NT,KV1613L
V
KV1610S
mA
mW
°C
°C
ELECTRICAL CHARCTERISTICS
T
A
=25°C
Parameter
Symbol
Units
Conditions
Value
規格
項目
記号
単½
条件
MIN
TYP
MAX
V
R
12
V
Reverse Voltage
逆方向電圧
I
R
=10µA
I
R
100
nA
V
R
=10V
Reverse Current
逆方向電流
C
1
446.0
510.0
pF
V
R
=1V, f=1MHz
18.0
26.0
KV1270NT V
R
=8V,
Diode Capacitance
容量値
C
8
pF
19.0
27.0
KV1610S, KV1613L f=1MHz
2.5
KV1270NT
V
R
=1V,
1.0
KV1610S
%
∆C
1
f=1MHz
3.0
KV1613L
3.0
KV1270NT
V
R
=4V,
%
2.0
KV1610S
Capacitance Tolerance
容量偏差
∆C
4
f=1MHz
3.5
KV1613L
3.0
KV1270NT
V
R
=8V,
2.0
KV1610S
%
∆C
8
f=1MHz
3.5
KV1613L
Q
Q
200
V
R
=1V, f=1MHz
17.0
KV1270NT
A
C /C
Capacitance Ratio
容量変化比
18.5
KV1610S, KV1613L
1 8
* Diode Capactance measured with Agilent 4279A or equivalent instruments ( at OSC level 20±5mVrms )
容量測定器は、Agilent
4279A又は相½品。OSCレベル 20±5mVrms。
2003 FALL

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