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2SA1037Q

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size284KB,2 Pages
ManufacturerRectron
Environmental Compliance  
Download Datasheet Parametric Compare View All

2SA1037Q Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

2SA1037Q Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
2SA1037
FEATURES
* Power dissipation
P
CM
:
0.2
W (Tamb=25
O
C)
* Collector current
I
CM
:
-0.15
A
* Collector-base voltage
V
(BR)CBO
:
-60
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
Cto+150
O
C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= -50mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= -1mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= -50mA, I
C
=0)
Collector cut-off current (V
CB
= -60V, I
E
=0)
Emitter cut-off current (V
EB
= -6V, I
C
=0)
DC current gain (V
CE
= -6V, I
C
= -1mA)
Collector-emitter saturation voltage (I
C
= -50mA, I
B
= -5mA)
Transistion frequency (V
CE
= -12V, I
C
= -2mA, f= 30MHz)
CLASSIFICATION OF h
FE
RANK
Range
Marking
Q
120-270
FQ
R
180-390
FR
S
270-560
FS
2006-3
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
MIN.
-60
-50
-6
-
-
120
-
120
TYP.
-
-
-
-
-
-
-
-
MAX.
-
-
-
-0.1
-0.1
560
-0.5
-
UNITS
V
V
V
mA
mA
-
V
MHz

2SA1037Q Related Products

2SA1037Q 2SA1037Q-T 2SA1037R 2SA1037R-T 2SA1037S 2SA1037S-T
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor
Reach Compliance Code compli compli compli compli compli compli
Base Number Matches 1 1 1 1 1 1
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