Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD826
DESCRIPTION
・With
TO-126 package
・Low
collector saturation voltage
・High
DC current gain
・Large
current capacity
APPLICATIONS
・For
3V, 6V strobe applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
固电
PARAMETER
导½
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
HAN
INC
SEM
GE
Open emitter
Open base
Open collector
t=100ms
T
a
=25℃
CONDITIONS
ON
IC
OR
DUT
VALUE
60
20
6
5
8
1.0
UNIT
V
V
V
A
A
P
C
Collector power dissipation
T
C
=25℃
10
150
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=3A; I
B
=60mA(pulse)
I
C
=3A; I
B
=60mA(pulse)
V
CB
=50V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=3A ; V
CE
=2V(pulse)
I
C
=50mA ; V
CE
=10V
f=1MHz ; V
CB
=10V
120
95
120
45
MIN
TYP.
2SD826
MAX
0.5
1.5
1.0
1.0
560
UNIT
V
V
μA
μA
MHz
pF
Switching times
t
on
t
stg
t
f
固电
Fall time
Turn-on time
Storage time
导½
半
ANG
H
G
280-560
h
FE-1
Classifications
E
120-200
F
160-320
INC
SEM
E
I
C
=2A ;I
B1
=-I
B2
=0.2A
V
CC
=10V; R
L
=5Ω
ON
IC
OR
DUT
30
300
40
ns
ns
ns
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD826
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions
3
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