Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-67, TO-67, 2 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-67 |
| package instruction | TO-67, 2 PIN |
| Contacts | 2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 30 A |
| Collector-emitter maximum voltage | 30 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 80 |
| JEDEC-95 code | TO-67 |
| JESD-30 code | O-XBSS-X2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 110 °C |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | SPECIAL SHAPE |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 170 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | BOTTOM |
| Transistor component materials | GERMANIUM |
| Nominal transition frequency (fT) | 0.002 MHz |
| Base Number Matches | 1 |
