UGE0221AY4 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> UGE0221AY4

Preview

UGE0221AY4: Description3.8 A, 4800 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size52KB，1 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

Download Datasheet Parametric Compare View All

UGE0221AY4 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	UGE0221AY4	-	-	View	Buy Now

UGE0221AY4 Overview

3.8 A, 4800 V, SILICON, RECTIFIER DIODE

UGE0221AY4 Parametric

Parameter Name	Attribute value
Number of terminals	1
Number of components	1
Processing package description	HERMETIC SEALED, PLASTIC PACKAGE-1
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	ROUND
Package Size	POST/STUD MOUNT
Terminal form	UNSPECIFIED
terminal coating	NOT SPECIFIED
Terminal location	UPPER
Packaging Materials	PLASTIC/EPOXY
Craftsmanship	AVALANCHE
structure	SINGLE
Shell connection	CATHODE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
application	HIGH VOLTAGE
Phase	1
Maximum repetitive peak reverse voltage	4800 V
Maximum average forward current	3.8 A
Maximum non-repetitive peak forward current	140 A

Preview

Download Datasheet

View All

UGB ... UGD...

1~ / 3~ High Voltage Rectifiers

V

RRM

= 4800-10500 V

I

F(AV)M

= 1.0-1.8 A

UGB

UGD

Type

V

RRM

V

V(RMS)

I

F(AV)M

I

FSM

45°C

°

10 ms

A

60

50

T

(vj)m

°

C

150

Weight

Dimensions

UGB

V

UGB 3132 AD

UGB 6124 AG

UGD 6123 AG

UGD 8124 AG

4800

10500

7200

10500

V

2250

5000

3300

5000

A

1.3

1.0

1.8

1.2

g

150

300

Fig.

1

2

Dimensions in mm (1 mm = 0.0394")

1

2

Type

UGB 3132 AD

UGB 6124 AG

UGD 6123 AG

UGD 8124 AG

a

b

c

57

112

d

58.5

e

f

g

15

32.5

30

h

15

25

18

i

k

80

70

135 125

260 6

260 11

260 8

15

32.5

18

30

18

30

I

XYS reserve the right to change limits, test conditions and dimensions.

20080123a

1-2

UGE0221AY4 Related Products

	UGE0221AY4	UGD6123AG	UGD8124AG
Description	3.8 A, 4800 V, SILICON, RECTIFIER DIODE	1 A, 10500 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 10500 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals	1	4	4
Number of components	1	4	4
Processing package description	HERMETIC SEALED, PLASTIC PACKAGE-1	UGB, 4 PIN	UGB, 4 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	ROUND	RECTANGULAR	RECTANGULAR
Package Size	POST/STUD MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal location	UPPER	UPPER	UPPER
Packaging Materials	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED
structure	SINGLE	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Shell connection	CATHODE	ISOLATED	ISOLATED
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Phase	1	1	1
Maximum repetitive peak reverse voltage	4800 V	10500 V	10500 V
Maximum non-repetitive peak forward current	140 A	50 A	50 A
Maximum average input current	-	1 A	1 A

Recommended Resources

Relay control circuitb

capacitor dimming circuit

VMOS tube high-quality power amplifier circuit

DC-DC converter schematic diagram

Power line transmission temperature patrol detection receiving circuit

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components