UGD6123AG datasheet, PDF - EEWORLD Datasheet

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UGD6123AG: Description1 A, 10500 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size52KB，1 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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UGD6123AG Overview

1 A, 10500 V, SILICON, BRIDGE RECTIFIER DIODE

UGD6123AG Parametric

Parameter Name	Attribute value
Number of terminals	4
Number of components	4
Maximum average input current	1 A
Processing package description	UGB, 4 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	UNSPECIFIED
terminal coating	NOT SPECIFIED
Terminal location	UPPER
Packaging Materials	UNSPECIFIED
structure	BRIDGE, 4 ELEMENTS
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Phase	1
Maximum repetitive peak reverse voltage	10500 V
Maximum non-repetitive peak forward current	50 A

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UGB ... UGD...

1~ / 3~ High Voltage Rectifiers

V

RRM

= 4800-10500 V

I

F(AV)M

= 1.0-1.8 A

UGB

UGD

Type

V

RRM

V

V(RMS)

I

F(AV)M

I

FSM

45°C

°

10 ms

A

60

50

T

(vj)m

°

C

150

Weight

Dimensions

UGB

V

UGB 3132 AD

UGB 6124 AG

UGD 6123 AG

UGD 8124 AG

4800

10500

7200

10500

V

2250

5000

3300

5000

A

1.3

1.0

1.8

1.2

g

150

300

Fig.

1

2

Dimensions in mm (1 mm = 0.0394")

1

2

Type

UGB 3132 AD

UGB 6124 AG

UGD 6123 AG

UGD 8124 AG

a

b

c

57

112

d

58.5

e

f

g

15

32.5

30

h

15

25

18

i

k

80

70

135 125

260 6

260 11

260 8

15

32.5

18

30

18

30

I

XYS reserve the right to change limits, test conditions and dimensions.

20080123a

1-2

UGD6123AG Related Products

	UGD6123AG	UGE0221AY4	UGD8124AG
Description	1 A, 10500 V, SILICON, BRIDGE RECTIFIER DIODE	3.8 A, 4800 V, SILICON, RECTIFIER DIODE	1 A, 10500 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals	4	1	4
Number of components	4	1	4
Processing package description	UGB, 4 PIN	HERMETIC SEALED, PLASTIC PACKAGE-1	UGB, 4 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	ROUND	RECTANGULAR
Package Size	FLANGE MOUNT	POST/STUD MOUNT	FLANGE MOUNT
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal location	UPPER	UPPER	UPPER
Packaging Materials	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED
structure	BRIDGE, 4 ELEMENTS	SINGLE	BRIDGE, 4 ELEMENTS
Shell connection	ISOLATED	CATHODE	ISOLATED
Diode component materials	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Phase	1	1	1
Maximum repetitive peak reverse voltage	10500 V	4800 V	10500 V
Maximum non-repetitive peak forward current	50 A	140 A	50 A
Maximum average input current	1 A	-	1 A

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