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UGB8DT

Description
8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size40KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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UGB8DT Overview

8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB

NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
UGB8AT THRU UGB8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 200 Volts
TO-263AB
Forward Current -
8.0 Amperes
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
Ultrafast reverse
recovery time for high efficiency
Soft recovery characteristics
Excellent high temperature switching
Glass passivated chip junction
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
0.047 (1.19)
0.055 (1.40)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
0.095 (2.41)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-263AB molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
PIN 1
K - HEATSINK
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UGB8AT
UGB8BT
UGB8CT
UGB8DT
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=100°C
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
C
=100°C
Maximum instantaneous forward voltage at: 8.0
20A
5.0A, T
J
=150°C
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Maximum reverse recovery time
(NOTE 2)
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
50
35
50
100
70
100
8.0
150
105
150
200
140
200
Volts
Volts
Volts
Amps
Amps
150.0
1.00
1.20
0.95
10.0
300.0
20.0
30.0
50.0
20.0
45.0
45.0
4.0
-55 to+150
V
F
I
R
t
rr
Volts
µA
ns
ns
nC
pF
°C/W
°C
T
C
=25°C
T
C
=100°C
T
J
=25°C
T
J
=100°C
T
J
=25°C
T
J
=100°C
t
rr
Q
rr
C
J
R
ΘJC
T
J
, T
STG
Maximum recovered stored charge
(NOTE 2)
Typical junction capacitance
(NOTE 3)
Typical thermal resistance
(NOTE 4)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) T
rr
and Q
rr
measured at I
F
=8.0A, V
R
=30V, di/dt=50A/µs, I
rr
=10% I
RM
for meaurement of t
rr
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
10/27/98

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UGB8DT UGB8CT UGB8BT UGB8AT
Description 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB

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Index Files: 573  1874  712  1231  1943  12  38  15  25  40 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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