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UGB18BCT

Description
18 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size84KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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UGB18BCT Overview

18 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB

NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
UGB18ACT THRU UGB18DCT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 200 Volts
TO-263AB
Forward Current -
18.0 Amperes
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very
high frequency switching
power supplies, inverters
and as a free wheeling diode
Ultrafast 25 nanosecond reverse recovery times
Soft recovery characteristics
Excellent high temperature switching
Glass passivated junctions
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
0.047 (1.19)
0.055 (1.40)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
0.095 (2.41)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-263AB molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
PIN 1
K - HEATSINK
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UGB18ACT
UGB18BCT
UGB18CCT
UGB18DCT
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=105°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg at T
C
=105°C
Maximum instantaneous forward voltage per leg at: 9.0A
20A
5.0A, T
J
=100°C
Maximum DC reverse current
T
C
=25°C
at rated DC blocking voltage per leg
T
C
=100°C
Maximum reverse recovery time
(NOTE 1)
Maximum reverse recovery time
T
J
=25°C
T
J
=100°C
(NOTE 2)
Maximum recovered stored charge
T
J
=25°C
T
J
=100°C
(NOTE 2)
Typical junction capacitance
(NOTE 3)
Typical thermal resistance
(NOTE 4)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(2) t
rr
and Q
rr
measured at: I
F
=9.0A, V
R
=30V, di/dt=50A/µs, I
rr=
10% I
RM
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case per leg
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
50
35
50
100
70
100
18.0
175.0
1.10
1.20
0.95
10.0
300.0
20.0
30.0
50.0
20.0
45.0
30.0
4.0
150
105
150
200
140
200
Volts
Volts
Volts
Amps
Amps
V
F
Volts
µA
ns
ns
nC
pF
°C/W
°C
I
R
t
rr
t
rr
Q
rr
C
J
R
ΘJC
T
J
, T
STG
-65 to +150
4/98

UGB18BCT Related Products

UGB18BCT UGB18CCT UGB18DCT UGB18ACT
Description 18 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB 18 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB 18 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 18 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
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