NEC's
NE687M03
NPN SILICON TRANSISTOR
FEATURES
•
NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 14 GHz
LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1
0.45
(0.9)
0.45
1
+0.1
0.2 -0
3
•
•
+0.1
0.3 -0
DESCRIPTION
NEC's NE687M03 transistor is designed for low noise, high
gain, and low cost requirements. This high f
T
part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE687 is also available in
six different low cost plastic surface mount package styles.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE
2
I
CBO
I
EBO
C
RE
3
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Forward Current Gain at V
CE
= 2 V, I
C
= 20 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 2 V, I
E
= 0, f = 1 MHz
μA
μA
pF
0.4
UNITS
GHz
GHz
dB
dB
dB
dB
8.5
6
70
MIN
9
7
NE687M03
2SC5436
M03
TYP
14
12
1.3
1.3
10
9.0
130
0.1
0.1
0.8
2
2
MAX
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE687M03
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
5
3
2
30
90
150
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
500
D.C. CURRENT GAIN
vs. COLECTOR CURRENT
Collector Current, I
C
(mA)
20
15
180
µA
160
µA
140
µA
120
µA
DC Current Gain, h
FE
200
µA
200
100
V
CE
= 2 V
V
CE
= 1 V
10
100
µA
80
µA
60
µA
40
µA
I
B
= 20
µA
50
5
20
0
0
2.2
2.4
2.6
10
1
2
5
10
20
50
100
Collector to Emmiter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 2V
Collector Current, I
C
(mA)
40
30
20
10
0
0.5
1.0
Base to Emmiter Voltage, V
BE
(V)
NE687M03
NE687M03 NONLINEAR MODEL
SCHEMATIC
C
CBPKG
C
CB
L
CX
L
BX
Base
L
B
C
CE
Collector
Q1
L
E
C
CEPKG
L
EX
Emitter
BJT NONLINEAR MODEL PARAMETERS
(1)
Parameters
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RE
RB
RBM
IRB
RC
CJE
VJE
MJE
CJC
VJC
Q1
302.3e-18
104
1.038
10
0.370
1e-6
31.19
17.54
1.023
30
8.369e-3
81.93e-12
4.986
0.80
11.10
2.46
17e-3
4.477
0.415e-12
0.68
0.53
0.102e-12
0.8
Parameters
MJC
XCJC
CJS
VJS
MJS
FC
TF
XTF
VTF
ITF
PTF
TR
EG
XTB
XTI
KF
AF
Q1
0.53
0.27
0
0.75
0
0.37
5e-12
8
0.06
1.0
69.1
1.e-9
1.11
0
3
0
1
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
ADDITIONAL PARAMETERS
Parameters
C
CB
C
CE
L
B
L
E
C
CBPKG
C
CEPKG
L
BX
L
CX
L
EX
687M03
0.26e-12
0.19e-12
0.4e-9
0.7e-9
0.08e-12
0.08e-12
0.12e-9
0.10e-9
0.12e-9
MODEL TEST CONDITIONS
Frequency: 0.1 to 5.0 GHz
Bias:
V
CE
= 0.5 V to 2.5 V, I
C
= 0.5 mA to 30 mA
Date:
11/98
hFE = 108 at 2 V, 20 mA
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/26/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
ARM Technology
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