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UG8JT

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size42KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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UG8JT Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

ADVANCED INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
UG8HT AND UG8JT
ULTRAFAST SOFT RECOVERY RECTIFIER
Reverse Voltage -
500 to 600 Volts
Forward Current -
8.0 Amperes
TO-220AC
0.185 (4.70)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
DIA.
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.175 (4.44)
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for freewheeling diode power factor
correction applications
Soft recovery characteristics
Excellent high temperature switching
Planar technology
Optimized to reduce switching losses
High temperature soldering guaranteed:
250°C/10 seconds at terminals
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.560 (14
0.530 (13
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
0.560 (14.22)
0.530 (13.46)
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-220AC molded plastic body
Terminals:
Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
Mounting Torque:
5 in. - lbs. max.
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
PIN 1
0.205 (5.20)
0.195 (4.95)
PIN 2
CASE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UG8HT
UG8JT
UNITS
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at I
F
= 8A
(NOTE 1)
Maximum reverse leakage current
at working peak reverse voltage
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=100°C
T
J
=125°C
V
RRM
V
RWM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
t
rr
S
I
RM
I
RM
t
fr
R
ΘJC
T
J
, T
STG
500
400
350
500
8.0
100.0
1.75
1.50
30
800
4.0
25
50
35
1.0
5.5
10.0
600
480
420
600
Volts
Volts
Volts
Volts
Amps
Amps
Volts
µA
µA
mA
ns
ns
-
Amps
Amps
ns
°C/W
°C
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Reverse recovery time at
Maximum
I
F
=1.0A, di/dt=50A/µs, V
R
=30V, I
rr
=0.1 I
RM
Typical
Typical softness factor (t
b
/t
a
) I
F
=8.0A, di/dt=240A/µs, V
R
=400V I
rr
=0.1 I
RM
Maximum reverse recovery current at
I
F
=8.0A, di/dt=64A/µs,V
R
=400V
T
C
=125°C
Typical reverse recovery current at
I
F
=8.0A, di/dt=240A/µs, V
R
=400V
T
C
=125°C
Peak forward recovery time at
Maximum
I
F
=8A, di/dt=64A/µs measured at 1.1 V
F
Typical
Typical thermal resistance from junction to case
Operating junction and storage temperature range
NOTE:
(1) Pulse test: 300µs pulse width, 1% duty cycle
NOTICE:
Advanced product information is subject to change without notice
500
250
2.2
-55 to+150
10/27/98

UG8JT Related Products

UG8JT UG8HT
Description 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC

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