This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2693, 2SD2693A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1724, 2SB1724A
■
Features
•
Wide safe oeration area
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
•
Full-pack package which can be installed to the heat sink with one screw.
Unit: mm
9.9
±0.3
3.0
±0.5
4.6
±0.2
2.9
±0.2
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage
(Emitter open)
(Base open)
2SD2693
2SD2693A
2SD2693A
Collector-emitter voltage 2SD2693
Emitter-base voltage (Collector open)
Collector current
Peak collector current
*
V
EBO
I
C
I
CP
P
C
T
j
Collector power dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
stg
Note) *: Non-repetitive peak collector current
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
Collector-emitter voltage
(Base open)
*1
2SD2693
2SD2693A
2SD2693A
2SD2693
nt
in
Collector-base cutoff
current (Emitter open)
current (Base open)
Collector-emitter cutoff
ce
Collector-emitter cutoff
current (E-B short)
/D
is
2SD2693A
2SD2693
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
en
*1
h
FE1
*1
Collector-emitter saturation voltage
V
CE(sat)
f
T
t
on
t
f
M
Pl
e
Transition frequency
Turn-on time
Storage time
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
70 to 150
P
120 to 250
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Publication date: September 2005
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13.7
±0.2
4.2
±0.2
Solder Dip
M
Di ain
sc te
on na
tin nc
ue e/
d
15.0
±0.5
φ
3.2
±0.1
1.4
±0.2
1.6
±0.2
2.6
±0.1
Rating
60
60
6
3
5
80
80
Unit
V
V
V
A
A
0.8
±0.1
0.55
±0.15
2.54
±0.30
5.08
±0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
25
W
Internal Connection
2.0
C
150
°C
−55
to
+150
°C
B
E
Conditions
Min
60
80
Typ
Max
Unit
V
I
C
=
30 mA, I
B
=
0
ue
I
CBO
I
CEO
V
CB
= 80 V, I
E
= 0
V
CE
=
60 V, I
B
=
0
V
CE
=
80 V, I
B
=
0
100
100
mA
µA
co
I
CES
V
CE
=
60 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
100
1
µA
an
I
EBO
h
FE2
mA
V
*2
V
CE
=
4 V, I
C
=
1 A
70
250
0.8
nt
V
CE
=
4 V, I
C
=
3 A
10
I
C
=
3 A, I
B
=
0.375 A
ai
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
= −
0.1 A
V
CC
=
50 V
30
MHz
µs
µs
µs
0.1
2.3
0.3
t
stg
1
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semiconductors described in this book
(1)
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–
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–
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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