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SSM3K03FE(TPL3,F)

Description
Small Signal Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size314KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

SSM3K03FE(TPL3,F) Overview

Small Signal Field-Effect Transistor

SSM3K03FE(TPL3,F) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
SSM3K03FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K03FE
High Speed Switching Applications
Analog Switch Applications
2.5 V gate drive
High input impedance
Low gate threshold voltage: V
th
= 0.7~1.3 V
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
20
10
100
100
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
Note:
JEITA
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2HA1B
temperature, etc.) may cause this product to decrease in the
Weight: 2.3 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
1
2007-11-01

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Reach Compliance Code unknown unknown
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