EEWORLDEEWORLDEEWORLD

Part Number

Search

NTTFS5826NL

Description
8 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size115KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

NTTFS5826NL Overview

8 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET

NTTFS5826NL Parametric

Parameter NameAttribute value
Number of terminals5
Minimum breakdown voltage60 V
Processing package descriptionLead FREE, CASE 511AB-01, WDFN-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeSQUARE
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current8 A
Rated avalanche energy20 mJ
Maximum drain on-resistance0.0320 ohm
Maximum leakage current pulse133 A
NTTFS5826NL
Power MOSFET
Features
60 V, 24 mW, Single N−Channel,
m8FL
Small Footprint (3.3 x 3.3 mm) for Compact Designs
Low Q
G(TOT)
to Minimize Switching Losses
Low Capacitance to Minimize Driver Losses
These are Pb−Free Devices
V
(BR)DSS
60 V
http://onsemi.com
R
DS(on)
MAX
24 mW @ 10 V
32 mW @ 4.5 V
N−Channel
D
Value
60
"20
20
14
Unit
V
V
A
S
W
1
Applications
I
D
MAX
20 A
Motor Drivers
DC−DC Converters
Synchronous Rectification
Power Management
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
YJ−mb
(Notes 1, 2, and 3)
Power Dissipation
R
YJ−mb
(Notes 1, 2,
and 3)
Continuous Drain
Current R
qJA
(Notes 1
& 3)
Power Dissipation
R
qJA
(Notes 1 & 3)
Pulsed Drain Current
T
mb
= 25°C
T
mb
= 100°C
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
G
19
10
8
6
3.1
1.6
133
−55
to
175
20
20
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
5826
A
Y
WW
G
S
S
S
G
5826
AYWWG
G
D
D
D
D
A
W
A
°C
A
mJ
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 14.4 A, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
T
L
260
°C
ORDERING INFORMATION
Device
NTTFS5826NLTAG
NTTFS5826NLTWG
Package
Shipping
WDFN8 1500/Tape & Reel
(Pb−Free)
WDFN8 5000/Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Mounting Board (top)
Steady
State (Notes 2, 3)
Junction−to−Ambient
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
7.9
48
Unit
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 2
1
Publication Order Number:
NTTFS5826NL/D
The problem with nandfalsh
I have a basic question. I am using a 2440 board. I first download Uboot to NorFalsh through jtag, then download Eboot and NK to NandFalsh through Uboot, and then start running from NandFalsh. 1. Can ...
linyis Embedded System
G2553 Serial Port Help
I use the G2553 serial port process, the sending data can enter the receiving interrupt, but mask TXBUF = RXBUF, assign the value in the receiving register to a variable, it can only enter the interru...
小粮zz Microcontroller MCU
Internet Management
State Council Information Office: New Internet technologies cannot be independent of social management 2006-7-7The head of the Internet Bureau of China's State Council Information Office recently stat...
ehk RF/Wirelessly
Automobile Group Subsidiary Recruitment of Car Audio Hardware Engineer/Wince Software Engineer
Beijing Penghao Jiye Technology Development Co., Ltd. is a wholly-owned subsidiary of Beijing Automotive Group, with a registered capital of RMB 22.12 million. It has a team of professionals from famo...
celtic Recruitment
Why does the 315/433M transceiver module receive a low level when the transmitter is at a high level?
Why does the 315/433M transceiver module receive a low level when the transmitter is high? It is easy to do phase inversion at the receiver, but is there any special reason for using the mechanism of ...
超级野狗 RF/Wirelessly
157 things you should know when you are a DSP
[p=35, null, left][b][color=#000000]1. Clock and power supply[/color][/b][/p][p=35, null, left][b][color=#000000] [/color][/b][/p][p=35, null, left][color=#000000]Q: What aspects should be paid specia...
Jacktang DSP and ARM Processors

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1800  1530  716  767  746  37  31  15  16  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号