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IXGH20N100

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size100KB,3 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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IXGH20N100 Overview

Insulated Gate Bipolar Transistor,

IXGH20N100 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instruction,
Reach Compliance Codeunknown
IGBT
IXGH 20N100
IXGT 20N100
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1000 V
=
40 A
= 3.0 V
= 280 ns
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
d
Weight
Mounting torque (M3)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 47
W
Clamped inductive load, L = 100
mH
T
C
= 25°C
Maximum Ratings
1000
1000
±20
±30
40
20
80
I
CM
= 40
@ 0.8 V
CES
150
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
A
G
TO-268
(IXGT)
G
E
(TAB)
TO-247 AD (IXGH)
W
°C
°C
°C
°C
Features
°C
G = Gate,
E = Emitter,
C
E
C (TAB)
C = Collector,
TAB = Collector
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
• International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
T
J
= 25°C
T
J
= 125°C
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
5
250
1
±100
2.2
3.0
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
• Capacitor discharge
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98620B (7/00)
© 2000 IXYS All rights reserved
1-2

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