IXGT20N100 datasheet, PDF - EEWORLD Datasheet

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IXGT20N100: DescriptionInsulated Gate Bipolar Transistor,; CategoryDiscrete semiconductor The transistor; File Size100KB，3 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com

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IXGT20N100 Overview

Insulated Gate Bipolar Transistor,

IXGT20N100 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Base Number Matches	1

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IGBT

IXGH 20N100

IXGT 20N100

V

CES

I

C25

V

CE(sat)

t

fi(typ)

= 1000 V

=

40 A

= 3.0 V

= 280 ns

Preliminary data

Symbol

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA

(RBSOA)

P

C

T

J

T

JM

T

stg

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum Tab temperature for soldering SMD devices for 10 s

M

d

Weight

Mounting torque (M3)

Test Conditions

T

J

= 25°C to 150°C

T

J

= 25°C to 150°C; R

GE

= 1 MW

Continuous

Transient

T

C

= 25°C

T

C

= 90°C

T

C

= 25°C, 1 ms

V

GE

= 15 V, T

VJ

= 125°C, R

G

= 47

W

Clamped inductive load, L = 100

mH

T

C

= 25°C

Maximum Ratings

1000

±20

±30

40

20

80

I

CM

= 40

@ 0.8 V

CES

150

-55 ... +150

150

-55 ... +150

300

260

V

A

G

TO-268

(IXGT)

G

E

(TAB)

TO-247 AD (IXGH)

W

°C

Features

°C

G = Gate,

E = Emitter,

C

E

C (TAB)

C = Collector,

TAB = Collector

1.13/10 Nm/lb.in.

TO-247 AD

TO-268

6

4

g

• International standard packages

JEDEC TO-268 surface and

JEDEC TO-247 AD

• High current handling capability

• MOS Gate turn-on

- drive simplicity

Applications

Symbol

Test Conditions

Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

1000

2.5

T

J

= 25°C

T

J

= 125°C

V

mA

nA

V

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

I

C

I

C

= 1 mA, V

GE

= 0 V

= 250

mA,

V

CE

= V

GE

•

5

250

1

±100

2.2

3.0

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

• Capacitor discharge

Advantages

• High power density

• Suitable for surface mounting

• Easy to mount with 1 screw,

(isolated mounting screw hole)

V

CE

= V

CES

V

GE

= 0 V

V

CE

= 0 V, V

GE

=

±20

V

I

C

= I

C90

, V

GE

= 15 V

IXYS reserves the right to change limits, test conditions, and dimensions.

98620B (7/00)

1-2

IXGT20N100 Related Products

	IXGT20N100	IXGH20N100
Description	Insulated Gate Bipolar Transistor,	Insulated Gate Bipolar Transistor,
Reach Compliance Code	unknown	unknown

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