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PMXB56EN

Description
30 V, N-channel Trench MOSFET
File Size266KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PMXB56EN Overview

30 V, N-channel Trench MOSFET

DF
N1
01
PMXB56EN
25 September 2013
0D
-3
30 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance R
DSon
= 49 mΩ
Very fast switching
3. Applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 3.2 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
30
20
3.2
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
49
55
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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