DF
N1
01
PMXB65ENE
24 September 2013
0D
-3
30 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance R
DSon
= 44 mΩ
3. Applications
•
•
•
•
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 3.2 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
30
20
3.2
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
44
67
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G
S
D
D
gate
source
drain
drain
2
Transparent top view
S
017aaa255
Simplified outline
1
4
3
Graphic symbol
D
G
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3.
Ordering information
Package
Name
PMXB65ENE
DFN1010D-3
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
Version
SOT1215
Type number
7. Marking
Table 4.
Marking codes
Marking code
00 10 00
Type number
PMXB65ENE
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
sp
= 25 °C
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Conditions
T
j
= 25 °C
Min
-
-20
[1]
[1]
Max
30
20
3.2
2.5
12.8
0.4
1.07
8.33
Unit
V
V
A
A
A
W
W
W
-
-
-
[2]
[1]
-
-
-
© NXP N.V. 2013. All rights reserved
Product data sheet
24 September 2013
2 / 15
NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
Symbol
T
j
T
amb
T
stg
I
S
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-55
-55
-65
Max
150
150
150
Unit
°C
°C
°C
Source-drain diode
source current
[1]
[2]
120
P
der
(%)
80
T
amb
= 25 °C
2
[1]
-
0.9
A
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMXB65ENE
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© NXP N.V. 2013. All rights reserved
Product data sheet
24 September 2013
3 / 15
NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
10
2
l
D
(A)
10
t
p
= 10 µs
aaa-008875
t
p
= 100 µs
1
t
p
= 1 ms
10
-1
DC; Tsp = 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 10 ms
t
p
= 100 ms
10
-2
10
-1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
271
102
10
Max
312
117
15
Unit
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
2
PMXB65ENE
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© NXP N.V. 2013. All rights reserved
Product data sheet
24 September 2013
4 / 15
NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.5
0.25
0.1
10
0.02
0
0.01
aaa-008918
0.75
0.33
0.2
0.05
1
10
-3
10-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
aaa-008919
duty cycle = 1
0.75
0.5
0.33
10
0.02
0.01
0
1
10
-3
0.25
0.2
0.1
0.05
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMXB65ENE
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© NXP N.V. 2013. All rights reserved
Product data sheet
24 September 2013
5 / 15
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