RN2967 datasheet, PDF - EEWORLD Datasheet

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RN2967: DescriptionTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process); CategoryDiscrete semiconductor The transistor; File Size266KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN2967 Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2967 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
package instruction	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V

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RN2967~RN2969

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2967,RN2968,RN2969

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1967~RN1969

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2967

RN2968

RN2969

R1 (kΩ)

R2 (kΩ)

JEDEC

―

JEITA

―

TOSHIBA

2-2J1B

Weight: 6.8mg (typ.)

Equivalent Circuit

(Top View)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2967~2969

RN2967

Emitter-base voltage

RN2968

RN2969

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2967~2969

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

200

150

−55~150

°C

Unit

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* :

Total rating

2007-11-01

RN2967 Related Products

	RN2967	RN2968	RN2969
Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	incompatible	conform to
package instruction	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN
Contacts	6	6	6
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 4.7	BUILT-IN RESISTOR RATIO IS 2.14	BUILT-IN RESISTOR RATIO IS 0.47
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80	70
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2
Number of terminals	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	240	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V
Maker	Toshiba Semiconductor	-	Toshiba Semiconductor

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