IRF250EPBF datasheet, PDF - EEWORLD Datasheet

IRF250EPBF: Description30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE; CategoryDiscrete semiconductor The transistor; File Size3MB，92 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRF250EPBF Overview

30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Objectid	8006005903
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
ECCN code	EAR99
compound_id	215656081
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	120 A
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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