IRFZ48-018 datasheet, PDF - EEWORLD Datasheet

IRFZ48-018: DescriptionPower Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,; CategoryDiscrete semiconductor The transistor; File Size176KB，6 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRFZ48-018 Overview

Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	290 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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