TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
DEVICES
LEVELS
2N7261
2N7261U
JANSR (100K RAD(Si))
JANSF (300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
T
C
= +25°C
Continuous Drain Current
T
C
= +100°C
Max. Power Dissipation
Drain to Source On State Resistance
Operating & Storage Temperature
Note:
(1) Derated Linearly by 0.2 W/°C for T
C
> +25°C
(2) V
GS
= 12Vdc, I
D
= 5.0A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise
noted)
Parameters / Test Conditions
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 1mAdc
Gate-Source Voltage (Threshold)
V
DS
≥
V
GS
, I
D
= 1.0mA
V
DS
≥
V
GS
, I
D
= 1.0mA, T
j
= +125°C
V
DS
≥
V
GS
, I
D
= 1.0mA, T
j
= -55°C
Gate Current
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V, T
j
= +125°C
Drain Current
V
GS
= 0V, V
DS
= 80V
V
GS
= 0V, V
DS
= 100V, T
j
= +125°C
V
GS
= 0V, V
DS
= 80V, T
j
= +125°C
Static Drain-Source On-State Resistance
V
GS
= 12V, I
D
= 5.0A pulsed
V
GS
= 12V, I
D
= 8.0A pulsed
T
j
= +125°C
V
GS
= 12V, I
D
= 5.0A pulsed
Diode Forward Voltage
V
GS
= 0V, I
D
= 8.0A pulsed
Symbol
V
(BR)DSS
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
I
DSS1
I
DSS2
I
DSS3
r
DS(on)1
r
DS(on)2
r
DS(on)3
V
SD
Min.
100
2.0
1.0
4.0
5.0
±100
±200
25
1.0
0.25
0.180
0.185
0.35
1.5
Max.
Unit
Vdc
Symbol
V
DS
V
GS
I
D1
I
D2
P
tl
R
ds(on)
T
op
, T
stg
Value
100
± 20
8.0
5.0
25
(1)
0.180
(2)
-55 to +150
Unit
Vdc
Vdc
Adc
Adc
W
Ω
°C
TO-205AF
(modified TO-39)
JANSR2N7261, JANSF2N7261
See Figure 1
Vdc
nAdc
µAdc
mAdc
mAdc
Ω
Ω
Ω
Vdc
18 PIN LEADLESS CHIP CARRIER
JANSR2N7261U, JANSF2N7261U
See Figure 2
T4-LDS-0119 Rev. 2 (101017)
Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
I
D
= 8.0A, V
GS
= 12Vdc,
Gate drive impedance = 7.5Ω,
V
DD
= 50Vdc
di/dt
≤
100A/µs, V
DD
≤
30V,
I
F
= 8.0A
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
rr
Min.
Max.
25
32
40
40
270
Unit
Symbol
Q
g(on)
Q
gs
Q
gd
Min.
Max.
50
10
20
Unit
nC
V
GS
= 12V, I
D
= 8.0A
V
DS
= 50V
ns
ns
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3)
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 1mAdc
Gate-Source Voltage (Threshold)
V
DS
≥
V
GS
, I
D
= 1.0mA MSR
V
DS
≥
V
GS
, I
D
= 1.0mA MSF
Gate Current
V
GS
= ±20V, V
DS
= 0V
Drain Current
V
GS
= 0V, V
DS
= 80V MSR
V
GS
= 0V, V
DS
= 80V MSF
Static Drain-Source On-State Voltage
V
GS
= 12V, I
D
= 5.0A pulsed MSR
V
GS
= 12V, I
D
= 5.0A pulsed MSF
Symbol
V
(BR)DSS
Min.
100
Max.
Unit
Vdc
V
GS(th)1
V
GS(th)1
I
GSS1
2.0
1.25
4.0
4.5
±100
Vdc
nAdc
I
DSS1
25
50
0.9
1.2
µAdc
V
DS(on)
Vdc
Diode Forward Voltage
V
GS
= 0V, I
D
= 8.0A pulsed
V
SD
1.5
Vdc
NOTE:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V)
conditions.
T4-LDS-0119 Rev. 2 (101017)
Page 2 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
Single Event Effect (SEE) Characteristics:
Heavy Ion testing of the 2N7261 device has been characterized at the Texas A&M cyclotron. The
following SOA curve has been established using the elements, LET, range, and Total Energy
conditions as shown:
2N7261
110
100
90
80
Drain Bias, V
70
60
50
40
30
20
10
0
0
-5
-10
-15
-20
-25
Gate Bias, V
TAMU Au
LET=85.4
Range =118um
Total Energy=2247MeV
TAMU Kr
LET=27.8
Range =134um
Total Energy=1032MeV
TAMU Ag
LET=42.2
Range =119um
Total Energy=1289MeV
TAMU Ar
LET=8.3
Range =192um
Total Energy=531MeV
It should be noted that total energy levels are considered to be a factor in SEE characterization.
Comparisons to other datasets should not be based on LET alone. Please consult factory for more
information.
T4-LDS-0119 Rev. 2 (101017)
Page 3 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
Figure 1: Case Outline and Pin Configuration for JANSR2N7261 & JANSF2N7261
T4-LDS-0119 Rev. 2 (101017)
Page 4 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
Figure 2: Case Outline and Pin Configuration for JANSR2N7261U & JANSF2N7261U
T4-LDS-0119 Rev. 2 (101017)
Page 5 of 5
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