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IRFBE32-002

Description
Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size41KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IRFBE32-002 Overview

Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRFBE32-002 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)2.8 A
Maximum drain-source on-resistance3.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)11 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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