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UFT70

Description
35 A, 500 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size209KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UFT70 Overview

35 A, 500 V, SILICON, RECTIFIER DIODE

UFT70 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingNOT SPECIFIED
Terminal locationSINGLE
Packaging MaterialsUNSPECIFIED
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationULTRA FAST RECOVERY
Phase1
Maximum reverse recovery time0.0600 us
Maximum repetitive peak reverse voltage500 V
Maximum average forward current35 A
Maximum non-repetitive peak forward current600 A

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