2N5551- MMBT5551 NPN General Purpose Amplifier
April 2006
2N5551- MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means h
FE
180~240 in 2N5551 (
Test condition : I
C
= 10mA, V
CE
= 5.0V
)
tm
2N5551
3
MMBT5551
2
TO-92
1
SOT-23
Marking: 3S
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
NOTES:
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current - Continuous
Junction and Storage Temperature
Value
160
180
6.0
600
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T =25°C unless otherwise noted
a
Symbol
P
D
R
θJA
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N5551
625
5.0
83.3
200
357
*MMBT5551
350
2.8
Units
mW
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6"
×
1.6"
×
0.06."
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
2N5551- MMBT5551 Rev. B
2N5551- MMBT5551 NPN General Purpose Amplifier
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Test Condition
I
C
= 1.0mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
a
= 100°C
V
EB
= 4.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, V
CE
= 10V,
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
V
BE
= 0.5V, I
C
= 0, f = 1.0MHz
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0kHz
I
C
= 250 uA, V
CE
= 5.0 V,
R
S
=1.0 kΩ, f=10 Hz to 15.7 kHz
Min.
160
180
6.0
Max.
Units
V
V
V
50
50
50
nA
µA
nA
On Characteristics
DC Current Gain
80
80
30
250
0.15
0.20
1.0
1.0
V
V
V
V
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
f
T
C
obo
C
ibo
H
fe
NF
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
100
300
6.0
20
50
250
8.0
dB
MHz
pF
pF
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
2
2N5551- MMBT5551 Rev. B
www.fairchildsemi.com
2N5551- MMBT5551 NPN General Purpose Amplifier
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
h
FE
- TYPICAL PULSED CURRENT GAIN
250
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
0.5
200
125 C
o
0.4
β
= 10
150
0.3
25 C
o
25 C
o
100
0.2
-40 C
50
o
125 C
o
V
CE
= 5V
0.1
- 40 C
1
10
100
o
0
0.1
0.2
0.5
1
2
5
10
20
50
100
0.0
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
1.0
Figure 4. Base-Emitter On Voltage
vs Collector Current
V
BEON
- BASE EMITTER ON VOLTAGE (V)
1.0
V
BESAT
- BASE EMITTER VOLTAGE (V)
β
= 10
0.8
- 40 C
o
- 40 C
o
0.8
25 C
0.6
o
125 C
0.4
o
0.6
25 C
125 C
o
o
0.4
0.2
0.2
V
CE
= 5V
1
10
100
0.0
1
10
100
200
0.0
0.1
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
50
V
CB
= 100V
Figure 6. Input and Output Capacitance
vs Reverse Voltage
30
f = 1.0 MHz
25
CAPACITANCE (pF)
20
10
15
10
C
ib
C
cb
1
10
100
5
1
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
0
0.1
V
CE
- COLLECTOR VOLTAGE (V)
3
2N5551- MMBT5551 Rev. B
www.fairchildsemi.com
2N5551- MMBT5551 NPN General Purpose Amplifier
Typical Performance Characteristics
(Continued)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance Between Emitter-Base
BV
CER
- BREAKDOWN VOLTAGE (V)
Figure 8. Small Signal Current Gain
vs Collector Current
h
FE
- SMALL SIGNAL CURRENT GAIN
Between Emitter-Base
260
vs Collector Current
16
FREG = 20 MHz
V
CE
= 10V
I
C
= 1.0 mA
240
12
220
8
200
180
4
160
0.1
1
10
100
1000
0
1
RESISTANCE (k
Ω
)
10
I
C
- COLLECTOR CURRENT (mA)
50
Figure 9. Power Dissipation
vs Ambient Temperature
700
P
D
- POWER DISSIPATION (mW)
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
TO-92
4
2N5551- MMBT5551 Rev. B
www.fairchildsemi.com
2N5551- MMBT5551 NPN General Purpose Amplifier
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in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner with-
out notice.
This datasheet contains preliminary data, and supplementary
data will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
in order to improve design.
This datasheet contains final specifications. Fairchild Semi-
conductor reserves the right to make changes at any time
without notice in order to improve design.
This datasheet contains specifications on a product that has
been discontinued by Fairchild semiconductor. The datasheet
is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I19
5
2N5551- MMBT5551 Rev. B
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