MMBT5551-L98Z datasheet, PDF - EEWORLD Datasheet

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MMBT5551-L98Z: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size156KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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MMBT5551-L98Z Overview

Transistor

MMBT5551-L98Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.6 A
Configuration	Single
Minimum DC current gain (hFE)	80
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.225 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)

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2N5551- MMBT5551 NPN General Purpose Amplifier

April 2006

2N5551- MMBT5551

NPN General Purpose Amplifier

Features

• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.

• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)

• Suffix “-Y” means h

180~240 in 2N5551 (

Test condition : I

= 10mA, V

= 5.0V

)

2N5551

MMBT5551

TO-92

SOT-23

Marking: 3S

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings *

Symbol

CEO

CBO

EBO

, T

stg

NOTES:

= 25°C unless otherwise noted

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector current - Continuous

Junction and Storage Temperature

Value

160

180

6.0

600

-55 ~ +150

Units

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T =25°C unless otherwise noted

Symbol

θJA

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max

2N5551

625

5.0

83.3

200

357

*MMBT5551

350

2.8

Units

mW/°C

°C/W

* Device mounted on FR-4 PCB 1.6"

1.6"

0.06."

www.fairchildsemi.com

2N5551- MMBT5551 Rev. B

MMBT5551-L98Z Related Products

	MMBT5551-L98Z	2N5551-C	2N5551-Y	2N5551YTFR	2N5551Y-J18Z	2N5551Y-J05Z	2N5551YTF	2N5551YCTA
Description	Transistor	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN	Transistor	Transistor	Transistor	Transistor	Transistor
Reach Compliance Code	unknown	unknow	compli	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
Configuration	Single	SINGLE	SINGLE	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	80	30	180	180	180	180	180	180
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	NO	NO	NO	NO	NO	NO	NO
Maximum power dissipation(Abs)	0.225 W	-	-	0.625 W	0.625 W	0.625 W	0.625 W	0.625 W
Nominal transition frequency (fT)	-	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Base Number Matches	-	1	1	1	1	1	1	1

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