2N6488AF datasheet, PDF - EEWORLD Datasheet

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2N6488AF: Description15A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size374KB，61 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2N6488AF Overview

15A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6488AF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	5 MHz
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general–purpose amplifier and switching applications.

•

DC Current Gain Specified to 15 Amperes —

hFE = 20 – 150 @ IC = 5.0 Adc

hFE

= 5.0 (Min) @ IC = 15 Adc

•

Collector–Emitter Sustaining Voltage —

VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490

VCEO(sus)

= 80 Vdc (Min) – 2N6488, 2N6491

•

High Current Gain — Bandwidth Product

fT = 5.0 MHz (Min) @ IC = 1.0 Adc

•

TO–220AB Compact Package

2N6487

2N6488*

PNP

2N6490

2N6491*

*Motorola Preferred Device

NPN

MAXIMUM RATINGS (1)

Rating

Symbol

VCEO

VCB

VEB

2N6487

2N6490

2N6488

2N6491

Unit

Vdc

Adc

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60 – 80 VOLTS

75 WATTS

PD, POWER DISSIPATION (WATTS)

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Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Base Current

5.0

Collector Current — Continuous

Total Power Dissipation @ TC = 25

Derate above 25

Total Power Dissipation @ TA = 25

Derate above 25

Operating and Storage Junction

Temperature Range

0.6

Watts

1.8

0.014

TJ, Tstg

– 65 to + 150

THERMAL CHARACTERISTICS

Characteristic

CASE 221A–06

TO–220AB

Symbol

θJC

θJA

Max

Unit

Thermal Resistance, Junction to Case

1.67

C/W

Thermal Resistance, Junction to Ambient

(1) Indicates JEDEC Registered Data.

TA TC

4.0 80

3.0

2.0

1.0

100

120

140

160

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 7

3–132

Motorola Bipolar Power Transistor Device Data

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